A Hall Effect sensor is a magnetic field sensor which is used to measure different parameters including temperature, pressure, current, or position. The working of Hall Effect sensors is based on Dr. Edwin Hall’s Hall Effect principle. Hall Effect principle states that if a conductor carrying current is placed near a magnet or in a magnetic field, a voltage will be generated which will be directly proportional to the product of the current and magnetic field. Though the generated output voltage is of few microvolts, the sensors can be used in high power range applications with the help of built-in DC amplifiers, voltage regulators, and logic switching circuits. The sensors are typically made from semiconductor materials such as indium arsenide, indium antimonite, or gallium arsenide. Some of the key features of Hall Effect current sensors include high speed operations, broad operating temperature range, and logic compatible input and output.
Demand for Hall Effect current sensors is expected to grow over the forecast period owing to their benefits such as ease of use, cost effectiveness, and robust & reliable performance. Easy installation process, growth in demand for intelligent Hall Effect current sensors, and various technological advancements in the development of Hall Effect current sensors are expected to be the key drivers for market growth. BiCMOS technology which is a combination of complementary metal oxide semiconductor and bipolar junction transistor is being used for manufacturing of Hall Effect current sensors. Compared to traditional CMOS technology, BiCMOS has high power dissipation, low input density, and high current drive per unit. Also, growing popularity of navigational equipment and electronic compass in consumer electronic devices is expected to boost market growth over the forecast period. Inconsistency with the power of magnetic fields could be a limiting factor for market growth. Nonetheless, significant growth of automotive electronic control systems and new vehicle technologies such as hybrid vehicles presents a great opportunity for the growth of Hall Effect current sensors. Increasing demand for safety and driver convenience features in automotive electronic control systems is expected to boost the adoption of sensors in the automotive industry. Current sensing technologies are also being used to integrate wireless and IP features in IP enabled telecommunication devices.
The Hall Effect current sensor market is segmented on the basis of type, output, technology, application, and region. On the basis of type, the market is subdivided into closed-loop current sensors and open-loop current sensors. Owing to higher accuracy and faster response time, closed-loop current sensors are projected to witness significant adoption rate over the forecast period. By output type, the market is classified as linear or analogue and threshold or digital type. Further, based on technology, the Hall Effect current sensor market can be segmented into BiCMOS and CMOS. On the basis of application, the market is classified as automotive, healthcare, consumer electronics, industrial automation, utilities, railway, telecommunication, aerospace & defense and others. Rise in global demand for consumer electronic devices including mobile phones, washing machines, smart TVs, home theatre systems, media players, gaming devices, digital cameras, and wearable devices is likely to drive the growth of the consumer electronics segment.
Geographically, the global Hall Effect current sensor market can be segmented into North America, Europe, Middle East & Africa, Asia Pacific and South America. Substantial growth of consumer electronics, industry automation, and automotive in Asia Pacific especially in emerging economies such as China, South Korea, and India is anticipated to drive the regional Hall Effect current sensor market.
Some of the key players in the global Hall Effect current sensor market are ABB Ltd., Allegro Microsystems, LLC., Asahi Kasei Microdevices Corporation, Micronas Semiconductor Holding AG, Electrohms Pvt Ltd, Honeywell International, Inc., Infineon Technologies AG, Kohshin Electric Corporation, Lem Holding SA, and Melexis NV.
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